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2sa2154.pdf Principales características:

2sa21542sa2154

2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154 General-Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -100 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 120 400 1 Complementary to 2SC6026 3 2 0.8 0.05 0.1 0.05 1.0 0.05 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V 0.1 0.05 Emitter-base voltage VEBO -5 V Collector current IC -100 mA 1.BASE Base current IB -30 mA 2.EMITTER 3.COLLECTOR fSM Collector power dissipation PC 50 mW Junction temperature Tj 150 C JEDEC Storage temperature range Tstg -55 150 C JEITA Note Using continuously under heavy loads (e.g. the application of high temp

 

Keywords - ALL TRANSISTORS. Principales características

 2sa2154.pdf Design, MOSFET, Power

 2sa2154.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sa2154.pdf Database, Innovation, IC, Electricity

 

 

 


 
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