2sa2154mfv.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

2sa2154mfv.pdf Principales características:

2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154MFV General-Purpose Amplifier Applications Unit mm 1.2 0.05 High voltage and high current 0.80 0.05 VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity 1 hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) 1 High hFE hFE = 120 400 Complementary to 2SC6026MFV 3 2 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V 1.BASE 2.EMITTER Emitter-base voltage VEBO -5 V VESM 3.COLLECTOR Collector current IC -150 mA Base current IB -30 mA JEDEC Collector power dissipation PC 150* mW JEITA Junction temperature Tj 150 C TOSHIBA 2-1L1A Storage temperature range Tstg -55 150 C Weight 1.5 mg (typ.) Note Using continuously under heavy loa