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2sc6026.pdf Principales características:

2sc60262sc6026

2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026 General-Purpose Amplifier Applications Unit mm High voltage and high current VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 120 400 Complementary to 2SA2154 1 3 Absolute Maximum Ratings (Ta = 25 C) 2 0.8 0.05 0.1 0.05 1.0 0.05 Characteristic Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V 0.1 0.05 Collector current IC 100 mA 1.BASE Base current IB 30 mA 2.EMITTER Collector power dissipation PC 50 mW fSM 3.COLLECTOR Junction temperature Tj 150 C JEDEC Storage temperature range Tstg -55 150 C JEITA Note Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-1E1A

 

Keywords - ALL TRANSISTORS. Principales características

 2sc6026.pdf Design, MOSFET, Power

 2sc6026.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc6026.pdf Database, Innovation, IC, Electricity

 

 
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