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GT50JR22 Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 GT50JR22 GT50JR22 1. Applications 1. Applications 1. Applications 1. Applications Dedicated to Current-Resonant Inverter Switching Applications Note The product(s) described herein should not be used for any other application. 2. Features 2. Features 2. Features 2. Features (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT tf = 0.05 s (typ.) (IC = 50 A) FWD trr = 0.35 s (typ.) (IF = 15 A) (5) Low saturation voltage VCE(sat) = 1.55 V (typ.) (IC = 50 A) (6) High junction temperature Tj = 175 (max) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1 Gate 2 Collector 3

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