Todos los transistores

 

gt50jr22.pdf Principales características:

gt50jr22gt50jr22

GT50JR22 Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 GT50JR22 GT50JR22 1. Applications 1. Applications 1. Applications 1. Applications Dedicated to Current-Resonant Inverter Switching Applications Note The product(s) described herein should not be used for any other application. 2. Features 2. Features 2. Features 2. Features (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT tf = 0.05 s (typ.) (IC = 50 A) FWD trr = 0.35 s (typ.) (IF = 15 A) (5) Low saturation voltage VCE(sat) = 1.55 V (typ.) (IC = 50 A) (6) High junction temperature Tj = 175 (max) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1 Gate 2 Collector 3

 

Keywords - ALL TRANSISTORS. Principales características

 gt50jr22.pdf Design, MOSFET, Power

 gt50jr22.pdf RoHS Compliant, Service, Triacs, Semiconductor

 gt50jr22.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.