p1503hv.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

p1503hv.pdf Principales características:

P1503HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 15m @VGS = 10V 30V 9A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 9 ID Continuous Drain Current TA = 70 C 7 A IDM 40 Pulsed Drain Current1 IAS Avalanche Current 24 EAS Avalanche Energy L = 0.1mH 29 mJ TA = 25 C 2 PD Power Dissipation W TA = 70 C 1.28 TJ, TSTG Operating Junction & Storage Temperature Range -55 to 150 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RqJA 62.5 C / W Junction-to-Lead RqJL 25 1 Pulse width limited by maximum junction temperature. Ver 1.1 1 2013-11-6 P1503HV Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERIST