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P1504BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 15m @VGS = 10V 40V 9A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 9 ID Continuous Drain Current TA = 70 C 7.5 A IDM 35 Pulsed Drain Current1 IAS Avalanche Current 32 EAS Avalanche Energy L = 0.1mH 52 mJ TA= 25 C 2.5 PD Power Dissipation W TA =70 C 1.6 Tj, Tstg Operating Junction & Storage Temperature Range -55 to 150 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RqJC 25 C / W Junction-to-Ambient RqJA 50 1 Pulse width limited by maximum junction temperature. REV 1.0 1 2014/9/19 P1504BVG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 C, Unless Otherwise Not

 

Keywords - ALL TRANSISTORS. Principales características

 p1504bvg.pdf Design, MOSFET, Power

 p1504bvg.pdf RoHS Compliant, Service, Triacs, Semiconductor

 p1504bvg.pdf Database, Innovation, IC, Electricity

 

 
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