Todos los transistores

 

p1504edg.pdf Principales características:

p1504edgp1504edg

P1504EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 15m @VGS = -10V -45A -40V 100% Rg tested 100% UIS tested TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 V TA= 25 C -45 ID Continuous Drain Current TA= 70 C -36 A IDM -150 Pulsed Drain Current1 IAS Avalanche Current -45 EAS L=0.1mH 102 mJ Avalanche Energy2 TC= 25 C 50 PD Power Dissipation W TC= 70 C 32 Tj, Tstg Junction & Storage Temperature Range -55 to 150 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RqJA 75 C / W Junction-to-Case RqJC 2.5 1 Pulse width limited by maximum junction temperature. 2 VDD = -20V . Starting TJ = 25 C. REV 1.0 1 2014/5/12 P150

 

Keywords - ALL TRANSISTORS. Principales características

 p1504edg.pdf Design, MOSFET, Power

 p1504edg.pdf RoHS Compliant, Service, Triacs, Semiconductor

 p1504edg.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.