Todos los transistores

 

p1504eis.pdf Principales características:

p1504eisp1504eis

P1504EIS P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 15m @VGS = -10V -40V -38A 100% Rg tested 100% UIS tested TO-251(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TC = 25 C -38 ID Continuous Drain Current TC = 100 C -24 A IDM -150 Pulsed Drain Current1 IAS Avalanche Current -44 EAS Avalanche Energy L = 0.1mH 96.8 mJ TC = 25 C 34 PD Power Dissipation W TC = 100 C 14 TJ, TSTG Operating Junction & Storage Temperature Range -55 to 150 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RqJA 75 C / W Junction-to-Case RqJC 3.6 1 Pulse width limited by maximum junction temperature. REV 1.0 1 2014/8/18 P1504EIS P-Channel Enhan

 

Keywords - ALL TRANSISTORS. Principales características

 p1504eis.pdf Design, MOSFET, Power

 p1504eis.pdf RoHS Compliant, Service, Triacs, Semiconductor

 p1504eis.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.