p1603bva.pdf datasheet:

P1603BVA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 16m @VGS = 10V 30V 9.4A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 9.4 ID Continuous Drain Current TA = 70 C 7.5 A IDM 50 Pulsed Drain Current1 IAS Avalanche Current 15 EAS Avalanche Energy L =0.1mH 11.2 mJ TA= 25 C 2.2 PD Power Dissipation W TA =70 C 1.4 Tj, Tstg Junction & Storage Temperature Range -55 to 150 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RqJA 55 C / W Junction-to-Case RqJC 18 1 Pulse width limited by maximum junction temperature. 2 The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a stil