mmbta56.pdf Principales características:
UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage VCEO=-80V * Collector Dissipation PD=350mW 1 2 SOT-23 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBTA56L-AE3-R MMBTA56G-AE3-R SOT-23 E B C Tape Reel MARKING www.unisonic.com.tw 1 of 5 Copyright 2005 Unisonic Technologies Co., Ltd QW-R206-090,B MMBTA56 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25 ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -4 V Collector Current - Continuous IC -500 mA Total Device Dissipation(Note 1) 350 mW PD Derate Above 25 2.8 mW/ Junction Temperature TJ +150 Storage Temperature TSTG -55 +150 Note 1. Device mounted on FR
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