irf510pbf sihf510.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irf510pbf sihf510.pdf Principales características:

IRF510, SiHF510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.54 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 8.3 Fast Switching Qgs (nC) 2.3 Ease of Paralleling Qgd (nC) 3.8 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S D levels to approximately 50 W. The low thermal resistance G S and low package cost of the TO-220AB contribute to its N-Channel MOSFET