irfp360pbf.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irfp360pbf.pdf Principales características:

IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.20 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 30 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Lead (Pb)-free Available D TO-247 DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial S D applications where higher power levels preclude the use of S G TO-220 devices. The TO-247 is similar but superior to the N-Channel MOSFET earlier TO-218 package because of its isolated mounting hole.