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SQS481ENW www.vishay.com Vishay Siliconix Automotive P-Channel 150 V (D-S) 175 C MOSFET FEATURES PowerPAK 1212-8W Single TrenchFET power MOSFET D D 8 D D AEC-Q101 qualified d 7 7 D D 6 6 100 % Rg and UIS tested 5 5 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 1 2 2 S S 3 3 S S S 4 4 S S 1 G Top View Bottom View Marking Code Q026 G PRODUCT SUMMARY VDS (V) -150 RDS(on) ( ) at VGS = -10 V 1.095 D ID (A) -4.7 P-Channel MOSFET Configuration Single Package PowerPAK 1212-8W ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS -150 V Gate-source voltage VGS 20 TC = 25 C -4.7 Continuous drain current a ID TC = 125 C -2.75 Continuous source current (diode conduction) a IS -8 A Pulsed drain curr

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