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2n5401.pdf Principales características:

2N5401 PNP Transistors TO-92 1 1. EMITTER 2 3 2. BASE 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2N5401 Unit Collector-Emitter Voltage V CEO -150 Vdc Collector-Base Voltage VCBO -160 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current IC 600 mAdc Total Device Dissipation T =25 C PD W 0.625 A Junction Temperature T 150 j C Storage, Temperature Tstg C -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) V(BR)CEO -150 Vdc Collector-Base Breakdown Voltage (IC= -100 Adc, IE=0) V(BR)CBO -160 - Vdc - Vdc V(BR)EBO -5.0 Emitter-Base Breakdown Voltage (IE= -10 Adc, IC=0) ICBO - -0.05 uAdc Collector Cutoff Current (V = -120 Vdc, IE=0) CB - IEBO d Emitter Cutoff Current (VEB= -4.0 V c, I =0) -0.05 uAdc C WEITRON http //www.weitron.com.tw 2

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