mje13003b.pdf Principales características:
WEITRON MJE13003B High Voltage Fast-switching COLLECTOR 2. NPN Power Transistor P b Lead(Pb)-Free 1. EMITTER 3. 2. COLLECTOR BASE 3. BASE DESCRIPTION 1. The device is manufactured using high voltage EMITTER TO-92 Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The MJE13003B is designed for use in compact fluorescent lamp application. FEATURE * Medium Voltage Capability * Low Spread Of Dynamic Parameters * Minimum Lot-to-lot Spread For Reliable Operation * Very High Switching Speed APPLICATIONS * Electronic Ballasts For Fluorescent Lighting ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Collector-Emitter Voltage (VBE = 0) VCES 700 V Collector-Emitter Voltage (IB = 0) VCEO 400
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mje13003b.pdf Design, MOSFET, Power
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