2sa1217.pdf datasheet:

isc Silicon PNP Power Transistor 2SA1217DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -40V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2877Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switching applications.Suitable for output stage of 5 watts car radio and car stereo.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -40 VCBOV Collector-Emitter Voltage -40 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -3 ACI Base Current-Continuous -1 ABTotal Power DissipationP 10 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silico