Справочник транзисторов.

 

Скачать даташит для 2sa1217:

2sa12172sa1217

isc Silicon PNP Power Transistor 2SA1217DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -40V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2877Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switching applications.Suitable for output stage of 5 watts car radio and car stereo.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -40 VCBOV Collector-Emitter Voltage -40 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -3 ACI Base Current-Continuous -1 ABTotal Power DissipationP 10 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silico

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 2sa1217.pdf Проектирование, MOSFET, Мощность

 2sa1217.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2sa1217.pdf База данных, Инновации, ИМС, Транзисторы

 

 
Back to Top

 


 
.