bd139.pdf datasheet:

isc Silicon NPN Power Transistor BD139DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 0.15AFE CCollector-Emitter Sustaining Voltage -: V = 80V(Min)CEO(SUS)Complement to type BD140Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as audio amplifiers and drivers utilizingcomplementary or quasi complementary circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 100 VCBOV Collector-Emitter Voltage 80 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 1.5 ACI Base Current-Continuous 0.5 ABCollector Power Dissipation1.25@ T =25aP WCCollector Power Dissipation12.5@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER