Справочник транзисторов.

 

Скачать даташит для bd139:

bd139bd139

isc Silicon NPN Power Transistor BD139DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 0.15AFE CCollector-Emitter Sustaining Voltage -: V = 80V(Min)CEO(SUS)Complement to type BD140Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as audio amplifiers and drivers utilizingcomplementary or quasi complementary circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 100 VCBOV Collector-Emitter Voltage 80 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 1.5 ACI Base Current-Continuous 0.5 ABCollector Power Dissipation1.25@ T =25aP WCCollector Power Dissipation12.5@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 bd139.pdf Проектирование, MOSFET, Мощность

 bd139.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 bd139.pdf База данных, Инновации, ИМС, Транзисторы

 

 
Back to Top

 


 
.