APT33GF120LRD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT33GF120LRD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 52 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
trⓘ - Tiempo de subida, typ: 85 nS
Coesⓘ - Capacitancia de salida, typ: 230 pF
Encapsulados: TO264
Búsqueda de reemplazo de APT33GF120LRD IGBT
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APT33GF120LRD datasheet
apt33gf120b2rd apt33gf120lrd.pdf
APT33GF120B2RD/LRD APT33GF120B2RD APT33GF120LRD 1200V 52A APT33GF120B2RD Fast IGBT & FRED T-Max TO-264 (B2RD) The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- (LRD) Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G G C L
apt33gf120hr.pdf
APT33GF120HR 1200V 38A Fast IGBT TO-258 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHz C C E Low Tail Current Ultra Low Leakage Current G G Avalanche Rated
apt33gf120brg.pdf
APT33GF120BR APT33GF120BR 1200V 52A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using TO-247 Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop Ultra Low Leakage Current C Low Tail Current G C RBSOA and SCSOA Rated E G High Freq
apt33gf120b2rd.pdf
APT33GF120B2RD APT33GF120LRD 1200V 52A APT33GF120B2RD Fast IGBT & FRED T-Max TO-264 (B2RD) The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- (LRD) Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G G C Low Forward Voltage D
Otros transistores... IGC109T120T6RL , IGC109T120T6RM , IGC10R60D , IGC10R60DE , IGC10T65QE , IGC114T170S8RH , IGC114T170S8RM , IGC11T120T6L , GT30F124 , IGC189T120T8RL , IGC189T120T6RL , IGC168T170S8RM , APT50GF120HR , IGC168T170S8RH , APT50GF120LR , APT50GF60AR , IGC142T120T8RL .
History: IGC189T120T8RL | IXSK30N60BD1
History: IGC189T120T8RL | IXSK30N60BD1
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