APT33GF120LRD Даташит. Аналоги. Параметры и характеристики.
Наименование: APT33GF120LRD
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 52 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.7 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
Tj ⓘ - Максимальная температура перехода: 150 ℃
tr ⓘ - Время нарастания типовое: 85 nS
Coesⓘ - Выходная емкость, типовая: 230 pF
Qg ⓘ - Общий заряд затвора, typ: 170 nC
Тип корпуса: TO264
Аналог (замена) для APT33GF120LRD
APT33GF120LRD Datasheet (PDF)
apt33gf120b2rd apt33gf120lrd.pdf

APT33GF120B2RD/LRDAPT33GF120B2RDAPT33GF120LRD1200V 52AAPT33GF120B2RDFast IGBT & FREDT-MaxTO-264(B2RD)The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-(LRD)Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.GGC L
apt33gf120hr.pdf

APT33GF120HR1200V 38AFast IGBTTO-258The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage CurrentGG Avalanche Rated
apt33gf120brg.pdf

APT33GF120BRAPT33GF120BR1200V 52AFast IGBTThe Fast IGBT is a new generation of high voltage power IGBTs. UsingTO-247Non-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop Ultra Low Leakage CurrentC Low Tail CurrentGC RBSOA and SCSOA RatedEG High Freq
apt33gf120b2rd.pdf

APT33GF120B2RDAPT33GF120LRD1200V 52AAPT33GF120B2RDFast IGBT & FREDT-MaxTO-264(B2RD)The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-(LRD)Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.GGC Low Forward Voltage D
Другие IGBT... IGC109T120T6RL , IGC109T120T6RM , IGC10R60D , IGC10R60DE , IGC10T65QE , IGC114T170S8RH , IGC114T170S8RM , IGC11T120T6L , GT30F124 , IGC189T120T8RL , IGC189T120T6RL , IGC168T170S8RM , APT50GF120HR , IGC168T170S8RH , APT50GF120LR , APT50GF60AR , IGC142T120T8RL .
History: MG10Q6ES50A
History: MG10Q6ES50A



Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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