SKM200GAL173D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SKM200GAL173D
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

   Máxima potencia disipada (Pc), W: 1250
   Tensión máxima colector-emisor |Vce|, V: 1700
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 220
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 3.4
   Tensión máxima de puerta-umbral |VGE(th)|, V: 6.2
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 100
   Capacitancia de salida (Cc), typ, pF: 2000
   Carga total de la puerta (Qg), typ, nC: 2000
   Paquete / Cubierta: MODULE

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SKM200GAL173D Datasheet (PDF)

..1. Size:675K semikron
skm200gal173d.pdf

3.1. Size:675K semikron
skm200gal176d.pdf

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skm200gal123dkld110.pdf

SKM200GAL123DKLD110 1200V 200A RECTIFIER AND CHOPPER Module August 2011 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability VCE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes APPLICATIONS AC and DC motor control AC servo and robot drives Power supplies Welding in

4.2. Size:415K semikron
skm200gal12t4.pdf

SKM200GAL12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GAL12T4Tc =80

4.3. Size:664K semikron
skm200gal126d.pdf

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skm200gal12e4.pdf

SKM200GAL12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GAL12E4Tc =80C 172

4.5. Size:635K semikron
skm200gal123d.pdf