SKM200GAL173D Spec and Replacement, IGBT Equivalent Finder, Cross Reference

SKM200GAL173D Specs and Replacement

Type Designator: SKM200GAL173D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 220 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃

tr ⓘ - Rise Time, typ: 100 nS

Coesⓘ - Output Capacitance, typ: 2000 pF

Package: MODULE

SKM200GAL173D Substitution

- IGBTⓘ Cross-Reference Search

SKM200GAL173D datasheet

..1. Size:675K semikron
skm200gal173d.pdf pdf_icon

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3.1. Size:675K semikron
skm200gal176d.pdf pdf_icon

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4.1. Size:265K macmic
skm200gal123dkld110.pdf pdf_icon

SKM200GAL123DKLD110 1200V 200A RECTIFIER AND CHOPPER Module August 2011 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability VCE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes APPLICATIONS AC and DC motor control AC servo and robot drives Power supplies Welding in... See More ⇒

4.2. Size:415K semikron
skm200gal12t4.pdf pdf_icon

SKM200GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 314 A Tj = 175 C Tc =80 C 242 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 229 A Tj = 175 C SKM200GAL12T4 Tc =80 ... See More ⇒