SKM200GAY173D Todos los transistores

 ..1. Size:2047K  semikron
 skm200gax173d skm200gay173d.pdf

SEMITRANS M Absolute Maximum Ratings Values IGBT Modules Symbol Conditions 1) Units VCES 1700 V VCGR RGE = 20 k 1700 V SKM 200 GAX 173 D 6) IC Tcase = 25/80 C 220 / 150 A SKM 200 GAY 173 D 6) ICM Tcase = 25/80 C; tp = 1 ms 440 / 300 A VGES 20 V Ptot per IGBT, Tcase = 25 C 1250 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 4000 V humidity DIN 40 040 Class F

 6.1. Size:260K  macmic
 skm200gah123dkl.pdf

SKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability VCE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes APPLICATIONS AC and DC motor control AC servo and robot drives Power supplies Welding inverters ABSOLUTE

 6.2. Size:265K  macmic
 skm200gal123dkld110.pdf

SKM200GAL123DKLD110 1200V 200A RECTIFIER AND CHOPPER Module August 2011 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability VCE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes APPLICATIONS AC and DC motor control AC servo and robot drives Power supplies Welding in

 6.3. Size:675K  semikron
 skm200gal173d.pdf

 6.4. Size:644K  semikron
 skm200gar123d.pdf

 6.5. Size:415K  semikron
 skm200gal12t4.pdf

SKM200GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 314 A Tj = 175 C Tc =80 C 242 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 229 A Tj = 175 C SKM200GAL12T4 Tc =80

 6.6. Size:684K  semikron
 skm200gar12e4.pdf

SKM200GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 313 A Tj = 175 C Tc =80 C 241 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 229 A Tj = 175 C SKM200GAR12E4 Tc =

 6.7. Size:664K  semikron
 skm200gal126d.pdf

 6.8. Size:684K  semikron
 skm200gar125d.pdf

 6.9. Size:414K  semikron
 skm200gal12e4.pdf

SKM200GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 314 A Tj = 175 C Tc =80 C 242 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 229 A Tj = 175 C SKM200GAL12E4 Tc =80 C 172

 6.10. Size:675K  semikron
 skm200gal176d.pdf

 6.11. Size:697K  semikron
 skm200gar173d.pdf

 6.12. Size:635K  semikron
 skm200gal123d.pdf

 6.13. Size:1667K  semikron
 skm200ga123d.pdf

SEMITRANS M Absolute Maximum Ratings Values IGBT Modules Symbol Conditions 1) ... 123 D ... 123 D1 Units V 1200 V CES SKM 200 GA 123 D*) V R = 20 k 1200 V CGR GE SKM 200 GB 123 D I T = 25/80 C 200 / 180 A C case SKM 200 GB 123 D1 6) I Tcase = 25/80 C; tp = 1 ms 400 / 360 A CM SKM 200 GAL 123 D 6) VGES 20 V SKM 200 GAR 123 D 6) Ptot per IGBT, Tcase = 25 C 1380 W

 6.14. Size:684K  semikron
 skm200gal125d.pdf