SKM200GAY173D PDF and Equivalents Search

SEMITRANS M Absolute Maximum Ratings Values IGBT Modules Symbol Conditions 1) Units VCES 1700 V VCGR RGE = 20 k 1700 V SKM 200 GAX 173 D 6) IC Tcase = 25/80 C 220 / 150 A SKM 200 GAY 173 D 6) ICM Tcase = 25/80 C; tp = 1 ms 440 / 300 A VGES 20 V Ptot per IGBT, Tcase = 25 C 1250 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 4000 V humidity DIN 40 040 Class F ... See More ⇒

SKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability VCE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes APPLICATIONS AC and DC motor control AC servo and robot drives Power supplies Welding inverters ABSOLUTE... See More ⇒

SKM200GAL123DKLD110 1200V 200A RECTIFIER AND CHOPPER Module August 2011 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability VCE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes APPLICATIONS AC and DC motor control AC servo and robot drives Power supplies Welding in... See More ⇒

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SKM200GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 314 A Tj = 175 C Tc =80 C 242 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 229 A Tj = 175 C SKM200GAL12T4 Tc =80 ... See More ⇒

SKM200GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 313 A Tj = 175 C Tc =80 C 241 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 229 A Tj = 175 C SKM200GAR12E4 Tc =... See More ⇒

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SKM200GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 314 A Tj = 175 C Tc =80 C 242 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 229 A Tj = 175 C SKM200GAL12E4 Tc =80 C 172... See More ⇒

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SEMITRANS M Absolute Maximum Ratings Values IGBT Modules Symbol Conditions 1) ... 123 D ... 123 D1 Units V 1200 V CES SKM 200 GA 123 D*) V R = 20 k 1200 V CGR GE SKM 200 GB 123 D I T = 25/80 C 200 / 180 A C case SKM 200 GB 123 D1 6) I Tcase = 25/80 C; tp = 1 ms 400 / 360 A CM SKM 200 GAL 123 D 6) VGES 20 V SKM 200 GAR 123 D 6) Ptot per IGBT, Tcase = 25 C 1380 W ... See More ⇒

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