SKM200GD062DK Todos los transistores

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SKM200GD062DK - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SKM200GD062DK

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 700W

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 2.3V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 200A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche:

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SKM200GD062DK Datasheet (PDF)

3.1. skm200gb063d.pdf Size:623K _igbt

SKM200GD062DK
SKM200GD062DK



3.2. skm200gb12v.pdf Size:446K _igbt

SKM200GD062DK
SKM200GD062DK

SKM200GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 311 A Tj = 175 °C Tc =80°C 237 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V VCC = 720 V SEMITRANS® 3 tpsc VGE ≤ 20 V Tj =125°C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Inverse diode IF Tc =25°C 229 A Tj = 175 °C SKM200GB12V Tc =80°C 172 A IFnom

3.3. skm200gal12e4.pdf Size:414K _igbt

SKM200GD062DK
SKM200GD062DK

SKM200GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 314 A Tj = 175 °C Tc =80°C 242 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®3 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C IGBT4 Modules Inverse diode IF Tc =25°C 229 A Tj = 175 °C SKM200GAL12E4 Tc =80°C 172

3.4. skm200gal126d.pdf Size:664K _igbt

SKM200GD062DK
SKM200GD062DK



3.5. skm200gb125d.pdf Size:684K _igbt

SKM200GD062DK
SKM200GD062DK



3.6. skm200gb173d.pdf Size:675K _igbt

SKM200GD062DK
SKM200GD062DK



3.7. skm200gb12e4.pdf Size:378K _igbt

SKM200GD062DK
SKM200GD062DK

SKM200GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 314 A Tj = 175 °C Tc =80°C 242 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®3 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C IGBT4 Modules Inverse diode IF Tc =25°C 229 A Tj = 175 °C SKM200GB12E4 Tc =80°C 172 A

3.8. skm200gar125d.pdf Size:684K _igbt

SKM200GD062DK
SKM200GD062DK



3.9. skm200gal123dkld110.pdf Size:265K _igbt

SKM200GD062DK
SKM200GD062DK

SKM200GAL123DKLD110 1200V 200A RECTIFIER AND CHOPPER Module August 2011 PRELIMINARY RoHS Compliant FEATURES □ Ultra Low Loss □ High Ruggedness □ High Short Circuit Capability □ VCE(sat) With Positive Temperature Coefficient □ With Fast Free-Wheeling Diodes APPLICATIONS □ AC and DC motor control □ AC servo and robot drives □ Power supplies □ Welding in

3.10. skm200gal12t4.pdf Size:415K _igbt

SKM200GD062DK
SKM200GD062DK

SKM200GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 314 A Tj = 175 °C Tc =80°C 242 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®3 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 229 A Tj = 175 °C SKM200GAL12T4 Tc =80°

3.11. skm200gar173d.pdf Size:697K _igbt

SKM200GD062DK
SKM200GD062DK



3.12. skm200gah123dkl.pdf Size:260K _igbt

SKM200GD062DK
SKM200GD062DK

SKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant FEATURES □ Ultra Low Loss □ High Ruggedness □ High Short Circuit Capability □ VCE(sat) With Positive Temperature Coefficient □ With Fast Free-Wheeling Diodes APPLICATIONS □ AC and DC motor control □ AC servo and robot drives □ Power supplies □ Welding inverters ABSOLUTE

3.13. skm200gm12t4.pdf Size:378K _igbt

SKM200GD062DK
SKM200GD062DK

SKM200GM12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 314 A Tj = 175 °C Tc =80°C 242 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V VCC = 800 V SEMITRANS® 3 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 229 A Tj = 175 °C SKM200GM12T4 Tc =80°C

3.14. skm200gal123d.pdf Size:635K _igbt

SKM200GD062DK
SKM200GD062DK



3.15. skm200gal125d.pdf Size:684K _igbt

SKM200GD062DK
SKM200GD062DK



3.16. skm200gb123d.pdf Size:635K _igbt

SKM200GD062DK
SKM200GD062DK



3.17. skm200gb12t4.pdf Size:379K _igbt

SKM200GD062DK
SKM200GD062DK

SKM200GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 314 A Tj = 175 °C Tc =80°C 242 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®3 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 229 A Tj = 175 °C SKM200GB12T4 Tc =80°C

3.18. skm200gal176d.pdf Size:675K _igbt

SKM200GD062DK
SKM200GD062DK



3.19. skm200gar12e4.pdf Size:684K _igbt

SKM200GD062DK
SKM200GD062DK

SKM200GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 313 A Tj = 175 °C Tc =80°C 241 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V VCC = 800 V SEMITRANS® 3 tpsc VGE ≤ 15 V Tj =150°C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C IGBT4 Modules Inverse diode IF Tc =25°C 229 A Tj = 175 °C SKM200GAR12E4 Tc =

3.20. skm200gb126d.pdf Size:664K _igbt

SKM200GD062DK
SKM200GD062DK



3.21. skm200gal173d.pdf Size:675K _igbt

SKM200GD062DK
SKM200GD062DK



3.22. skm200gb176d.pdf Size:675K _igbt

SKM200GD062DK
SKM200GD062DK



Otros transistores... SKM200GAX173D , SKM200GAY173D , SKM200GB063D , SKM200GB123D , SKM200GB124D , SKM200GB173D , SKM200GB174D , SKM200GBD123D1S , RJP30H1DPP-M0 , SKM22GD123D , SKM300GA123D , SKM300GA173D , SKM300GAL063D , SKM300GAL123D , SKM300GAR063D , SKM300GAR123D , SKM300GAX123D .

 


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