FGH50N6S2D - аналоги и описание IGBT

 

FGH50N6S2D - аналоги, основные параметры, даташиты

Наименование: FGH50N6S2D

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 463 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃

tr ⓘ - Время нарастания типовое: 15 nS

Тип корпуса: TO247

 Аналог (замена) для FGH50N6S2D

- подбор ⓘ IGBT транзистора по параметрам

 

FGH50N6S2D даташит

 ..1. Size:396K  1
fgh50n6s2d.pdfpdf_icon

FGH50N6S2D

IGBT - SMPS II Series N-Channel with Anti-Parallel Stealth Diode 600 V FGH50N6S2D www.onsemi.com Description The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS C IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement o

 ..2. Size:195K  fairchild semi
fgh50n6s2d.pdfpdf_icon

FGH50N6S2D

July 2002 FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH50N6S2D is a Low Gate Charge, Low Plateau 100kHz Operation at 390V, 40A Voltage SMPS II IGBT combining the fast switching speed 200kHZ Operation at 390V, 25A of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS)

 8.1. Size:183K  fairchild semi
fgh50n3.pdfpdf_icon

FGH50N6S2D

July 2002 FGH50N3 300V, PT N-Channel IGBT General Description Features The FGH50N3 is a MOS gated high voltage switching Low VCE(SAT) . . . . . . . . . . . . . . . . . . .

 8.2. Size:348K  onsemi
fgh50n3.pdfpdf_icon

FGH50N6S2D

IGBT - SMPS 300 V FGH50N3 Description Using ON Semiconductor s planar technology, this IGBT is ideal for many high voltage switching applications operating at high www.onsemi.com frequencies where low conduction losses are essential. This device has been optimized for medium frequency switch mode power supplies. Features C Low Saturation Voltage VCE(sat) = 1.4 V Max Low

Другие IGBT... SKM200GAX173D , SKM200GAY173D , SKM200GB063D , SKM200GB123D , SKM200GB124D , SKM200GB173D , SKM200GB174D , SKM200GBD123D1S , SGT40N60NPFDPN , SKM22GD123D , SKM300GA123D , SKM300GA173D , SKM300GAL063D , SKM300GAL123D , SKM300GAR063D , SKM300GAR123D , SKM300GAX123D .

History: FGP3040G2-F085 | SKM400GA123D

 

 

 

 

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