SKM300GAL063D Todos los transistores

 

SKM300GAL063D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SKM300GAL063D
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1350 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 400 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 80 nS
   Coesⓘ - Capacitancia de salida, typ: 2000 pF
   Paquete / Cubierta: MODULE

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SKM300GAL063D Datasheet (PDF)

 ..1. Size:660K  semikron
skm300gal063d.pdf

SKM300GAL063D
SKM300GAL063D

 5.1. Size:414K  semikron
skm300gal12t4.pdf

SKM300GAL063D
SKM300GAL063D

SKM300GAL12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 422 ATj = 175 CTc =80C 324 AICnom 300 AICRM ICRM = 3xICnom 900 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 353 ATj = 175 CSKM300GAL12T4Tc =80

 5.2. Size:653K  semikron
skm300gal123d.pdf

SKM300GAL063D
SKM300GAL063D

 5.3. Size:413K  semikron
skm300gal12e4.pdf

SKM300GAL063D
SKM300GAL063D

SKM300GAL12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 422 ATj = 175 CTc =80C 324 AICnom 300 AICRM ICRM = 3xICnom 900 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 353 ATj = 175 CSKM300GAL12E4Tc =80C 264

Otros transistores... SKM200GB124D , SKM200GB173D , SKM200GB174D , SKM200GBD123D1S , FGH50N6S2D , SKM22GD123D , SKM300GA123D , SKM300GA173D , IHW20N120R3 , SKM300GAL123D , SKM300GAR063D , SKM300GAR123D , SKM300GAX123D , SKM300GAY123D , SKM300GB063D , SKM300GB123D , SKM300GB124D .

 

 
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SKM300GAL063D
  SKM300GAL063D
  SKM300GAL063D
 

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Recientemente añadidas las descripciónes de los transistores

IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2

 

 

 
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