SKM400GB062D Todos los transistores

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SKM400GB062D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SKM400GB062D

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1400W

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 2.3V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 400A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche:

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SKM400GB062D Datasheet (PDF)

1.1. skm400gb066d.pdf Size:847K _igbt

SKM400GB062D
SKM400GB062D



2.1. skm400gb125d.pdf Size:772K _igbt

SKM400GB062D
SKM400GB062D



2.2. skm400gb12t4.pdf Size:379K _igbt

SKM400GB062D
SKM400GB062D

SKM400GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 618 A Tj = 175 °C Tc =80°C 475 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®3 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 440 A Tj = 175 °C SKM400GB12T4 Tc =80°C

2.3. skm400gb176d.pdf Size:749K _igbt

SKM400GB062D
SKM400GB062D



2.4. skm400gb12v.pdf Size:438K _igbt

SKM400GB062D
SKM400GB062D

SKM400GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 612 A Tj = 175 °C Tc =80°C 467 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 720 V SEMITRANS® 3 tpsc VGE ≤ 20 V Tj =125°C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Inverse diode IF Tc =25°C 440 A Tj = 175 °C SKM400GB12V Tc =80°C 329 A IFnom

2.5. skm400gb126d.pdf Size:587K _igbt

SKM400GB062D
SKM400GB062D



2.6. skm400gb12e4.pdf Size:644K _igbt

SKM400GB062D
SKM400GB062D

SKM400GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 616 A Tj = 175 °C Tc =80°C 474 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 800 V SEMITRANS® 3 tpsc VGE ≤ 15 V Tj =150°C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C IGBT4 Modules Inverse diode IF Tc =25°C 440 A Tj = 175 °C SKM400GB12E4 Tc =8

2.7. skm400gb123d.pdf Size:638K _igbt

SKM400GB062D
SKM400GB062D



Otros transistores... SKM400GA123D , SKM400GA124D , SKM400GA173D , SKM400GA174D , SKM400GAL062D , SKM400GAL124D , SKM400GAR062D , SKM400GAR124D , HGTG30N60A4D , SKM400GB123D , SKM400GB124D , SKM40GD123D , SKM40GD124D , SKM40GDL123D , SKM500GA123D , SKM500GA123S , SKM500GA124D .

 


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Introduzca al menos 1 números o letras