SKM400GB062D Datasheet and Replacement

SEMITRANS MAbsolute Maximum RatingsValuesPT-IGBT ModulesSymbol Conditions 1)UnitsVCES 600 VVCGR RGE = 20 k 600 V SKM 400 GA 062 D *)IC Tcase = 25/60 C 475 / 400 ASKM 400 GB 062 DICM Tcase = 25/60 C; tp = 1 ms 950 / 800 ASKM 400 GAL 062 D 6)VGES 20 VSKM 400 GAR 062 D 6)Ptot per IGBT, Tcase = 25 C 1400 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 m

SKM400GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 618 ATj = 175 CTc =80C 475 AICnom 400 AICRM ICRM = 3xICnom 1200 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 440 ATj = 175 CSKM400GB12T4Tc =80C

SKM400GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 612 ATj = 175 CTc =80C 467 AICnom 400 AICRM ICRM = 3xICnom 1200 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 3tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 440 ATj = 175 CSKM400GB12VTc =80C 329 AIFnom

SKM400GB12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 616 ATj = 175 CTc =80C 474 AICnom 400 AICRM ICRM = 3xICnom 1200 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 3tpsc VGE 15 V Tj =150C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 440 ATj = 175 CSKM400GB12E4Tc =8