SKM50GAL123D Todos los transistores

 

SKM50GAL123D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SKM50GAL123D
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 310 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 60 nS
   Coesⓘ - Capacitancia de salida, typ: 500 pF
   Qgⓘ - Carga total de la puerta, typ: 500 nC
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

SKM50GAL123D Datasheet (PDF)

 ..1. Size:758K  semikron
 skm50gal123d.pdf pdf_icon

SKM50GAL123D

 4.1. Size:498K  semikron
 skm50gal12t4.pdf pdf_icon

SKM50GAL123D

SKM50GAL12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 81 ATj = 175 CTc =80C 62 AICnom 50 AICRM ICRM = 3xICnom 150 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 65 ATj = 175 CSKM50GAL12T4Tc

 8.1. Size:459K  semikron
 skm50gb12t4.pdf pdf_icon

SKM50GAL123D

SKM50GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 81 ATj = 175 CTc =80C 62 AICnom 50 AICRM ICRM = 3xICnom 150 AVGES -20 ... 20 VVCC = 800 VSEMITRANS2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 65 ATj = 175 CSKM50GB12T4Tc =80C 49 A

 8.2. Size:463K  semikron
 skm50gb063d.pdf pdf_icon

SKM50GAL123D

SKM50GB063DAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 600 VIC Tc =25C 70 ATj = 150 CTc =75C 51 AICnom 50 AICRM ICRM = 2xICnom 100 AVGES -20 ... 20 VVCC = 300 VSEMITRANS 2tpsc VGE 20 V Tj = 125 C 10 sVCES 600 VTj -55 ... 150 CSuperfast NPT-IGBT Inverse diodeModulesIF Tc =25C 75 ATc =80C 45 ASKM50GB0

MOSTRAR MÁS

Otros transistores... SKM400GB124D , SKM40GD123D , SKM40GD124D , SKM40GDL123D , SKM500GA123D , SKM500GA123S , SKM500GA124D , SKM500GA174D , IKW50N60H3 , SKM50GB063D , SKM50GB123D , SKM50GD063DL , SKM50GDL063DL , SKM50GH063DL , SKM75GAL063D , SKM75GAL123D , BRG60N65D .

History: SGT75T65SDM1P4 | STGB19NC60S | IXGE200N60B | 7MBR25LC120 | IXGM40N60 | APTGT200DA170D3 | IXA20PT1200LB

 

 
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