All IGBT. SKM50GAL123D Datasheet

 

SKM50GAL123D IGBT. Datasheet pdf. Equivalent

Type Designator: SKM50GAL123D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 310W

Maximum Collector-Emitter Voltage |Vce|, V: 1200V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.7V

Maximum Collector Current |Ic|, A: 50A

Maximum Junction Temperature (Tj), °C: 150

SKM50GAL123D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SKM50GAL123D Datasheet (PDF)

1.1. skm50gal12t4.pdf Size:498K _igbt

SKM50GAL123D
SKM50GAL123D

SKM50GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 81 A Tj = 175 °C Tc =80°C 62 A ICnom 50 A ICRM ICRM = 3xICnom 150 A VGES -20 ... 20 V VCC = 800 V SEMITRANS® 2 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 65 A Tj = 175 °C SKM50GAL12T4 Tc

1.2. skm50gal123d.pdf Size:758K _igbt

SKM50GAL123D
SKM50GAL123D



4.1. skm50gb12t4.pdf Size:459K _igbt

SKM50GAL123D
SKM50GAL123D

SKM50GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 81 A Tj = 175 °C Tc =80°C 62 A ICnom 50 A ICRM ICRM = 3xICnom 150 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®2 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 65 A Tj = 175 °C SKM50GB12T4 Tc =80°C 49 A

4.2. skm50gb063d.pdf Size:463K _igbt

SKM50GAL123D
SKM50GAL123D

SKM50GB063D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 600 V IC Tc =25°C 70 A Tj = 150 °C Tc =75°C 51 A ICnom 50 A ICRM ICRM = 2xICnom 100 A VGES -20 ... 20 V VCC = 300 V SEMITRANS® 2 tpsc VGE ≤ 20 V Tj = 125 °C 10 µs VCES ≤ 600 V Tj -55 ... 150 °C Superfast NPT-IGBT Inverse diode Modules IF Tc =25°C 75 A Tc =80°C 45 A SKM50GB0

4.3. skm50gb123d.pdf Size:758K _igbt

SKM50GAL123D
SKM50GAL123D



4.4. skm50gb12v.pdf Size:382K _igbt

SKM50GAL123D
SKM50GAL123D

SKM50GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 79 A Tj = 175 °C Tc =80°C 60 A ICnom 50 A ICRM ICRM = 3xICnom 150 A VGES -20 ... 20 V VCC = 720 V SEMITRANS® 2 tpsc VGE ≤ 15 V Tj = 125 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Inverse diode IF Tc =25°C 65 A Tj = 175 °C SKM50GB12V Tc =80°C 49 A IFnom 50 A Target Da

Datasheet: SKM400GB124D , SKM40GD123D , SKM40GD124D , SKM40GDL123D , SKM500GA123D , SKM500GA123S , SKM500GA124D , SKM500GA174D , IRG4PF50W , SKM50GB063D , SKM50GB123D , SKM50GD063DL , SKM50GDL063DL , SKM50GH063DL , SKM75GAL063D , SKM75GAL123D , SKM75GAR063 .

 


SKM50GAL123D
  SKM50GAL123D
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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |