SKM50GAL123D Spec and Replacement, IGBT Equivalent Finder, Cross Reference

SKM50GAL123D Specs and Replacement

Type Designator: SKM50GAL123D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 310 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 60 nS

Coesⓘ - Output Capacitance, typ: 500 pF

Package: MODULE

SKM50GAL123D Substitution

- IGBT ⓘ Cross-Reference Search

SKM50GAL123D datasheet

..1. Size:758K semikron
skm50gal123d.pdf pdf_icon

... See More ⇒

4.1. Size:498K semikron
skm50gal12t4.pdf pdf_icon

SKM50GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 81 A Tj = 175 C Tc =80 C 62 A ICnom 50 A ICRM ICRM = 3xICnom 150 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 2 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 65 A Tj = 175 C SKM50GAL12T4 Tc ... See More ⇒

8.1. Size:459K semikron
skm50gb12t4.pdf pdf_icon

SKM50GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 81 A Tj = 175 C Tc =80 C 62 A ICnom 50 A ICRM ICRM = 3xICnom 150 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 2 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 65 A Tj = 175 C SKM50GB12T4 Tc =80 C 49 A ... See More ⇒

8.2. Size:463K semikron
skm50gb063d.pdf pdf_icon

SKM50GB063D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 600 V IC Tc =25 C 70 A Tj = 150 C Tc =75 C 51 A ICnom 50 A ICRM ICRM = 2xICnom 100 A VGES -20 ... 20 V VCC = 300 V SEMITRANS 2 tpsc VGE 20 V Tj = 125 C 10 s VCES 600 V Tj -55 ... 150 C Superfast NPT-IGBT Inverse diode Modules IF Tc =25 C 75 A Tc =80 C 45 A SKM50GB0... See More ⇒