SKM50GAL123D Datasheet and Replacement

SKM50GAL12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 81 ATj = 175 CTc =80C 62 AICnom 50 AICRM ICRM = 3xICnom 150 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 65 ATj = 175 CSKM50GAL12T4Tc

SKM50GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 81 ATj = 175 CTc =80C 62 AICnom 50 AICRM ICRM = 3xICnom 150 AVGES -20 ... 20 VVCC = 800 VSEMITRANS2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 65 ATj = 175 CSKM50GB12T4Tc =80C 49 A

SKM50GB063DAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 600 VIC Tc =25C 70 ATj = 150 CTc =75C 51 AICnom 50 AICRM ICRM = 2xICnom 100 AVGES -20 ... 20 VVCC = 300 VSEMITRANS 2tpsc VGE 20 V Tj = 125 C 10 sVCES 600 VTj -55 ... 150 CSuperfast NPT-IGBT Inverse diodeModulesIF Tc =25C 75 ATc =80C 45 ASKM50GB0

SEMITRANS Absolute Maximum RatingsValuesSuperfast NPT-IGBT Symbol Conditions 1)UnitsModulesVCES 600 VVCGR RGE = 20 k 600 VIC Tcase = 25/75 C 70 / 50 ASKM 50 GD 063 DLICM Tcase = 25/75 C; tp = 1 ms 140 / 100 ASKM 50 GDL 063 D**)VGES 20 VSKM 50 GH 063 DL ***)Ptot per IGBT, Tcase = 25 C 250 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 2500 V

SKM50GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 79 ATj = 175 CTc =80C 60 AICnom 50 AICRM ICRM = 3xICnom 150 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 15 V Tj = 125 C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 65 ATj = 175 CSKM50GB12VTc =80C 49 AIFnom 50 ATarget Da