BRG60N65D Todos los transistores

 

BRG60N65D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BRG60N65D
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 310 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 35 nS
   Coesⓘ - Capacitancia de salida, typ: 300 pF
   Paquete / Cubierta: TO3P
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BRG60N65D Datasheet (PDF)

 ..1. Size:1988K  1
 brg60n65d.pdf pdf_icon

BRG60N65D

BRG60N65D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , ,RoHS Built in fast recovery diode, Saturation voltage positive temperature

 ..2. Size:1988K  blue-rocket-elect
 brg60n65d.pdf pdf_icon

BRG60N65D

BRG60N65D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , ,RoHS Built in fast recovery diode, Saturation voltage positive temperature

 7.1. Size:768K  blue-rocket-elect
 brg60n60d.pdf pdf_icon

BRG60N65D

BRG60N60D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , ,RoHS Built in fast recovery diode, Saturation voltage positive temperature

Otros transistores... SKM50GAL123D , SKM50GB063D , SKM50GB123D , SKM50GD063DL , SKM50GDL063DL , SKM50GH063DL , SKM75GAL063D , SKM75GAL123D , RJH60F5DPQ-A0 , SKM75GB063D , SKM75GB123D , SKM75GB124D , SKM75GB173D , SKM75GD123D , SKM75GD124D , SKM75GDL123D , SM2G100US120 .

History: APT33GF120HR | IRGP4790 | IRG4BC20U | CM200DU-24NFH | STGW100H65FB2-4 | FGH40T120SMD-F155 | VS-GB200TH120U

 

 
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