BRG60N65D IGBT. Datasheet pdf. Equivalent
Type Designator: BRG60N65D
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 310 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 35 nS
Coesⓘ - Output Capacitance, typ: 300 pF
Package: TO3P
BRG60N65D Transistor Equivalent Substitute - IGBT Cross-Reference Search
BRG60N65D Datasheet (PDF)
brg60n65d.pdf
BRG60N65D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , ,RoHS Built in fast recovery diode, Saturation voltage positive temperature
brg60n65d.pdf
BRG60N65D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , ,RoHS Built in fast recovery diode, Saturation voltage positive temperature
brg60n60d.pdf
BRG60N60D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , ,RoHS Built in fast recovery diode, Saturation voltage positive temperature
Datasheet: SKM50GAL123D , SKM50GB063D , SKM50GB123D , SKM50GD063DL , SKM50GDL063DL , SKM50GH063DL , SKM75GAL063D , SKM75GAL123D , RJH3047 , SKM75GB063D , SKM75GB123D , SKM75GB124D , SKM75GB173D , SKM75GD123D , SKM75GD124D , SKM75GDL123D , SM2G100US120 .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2