All IGBT. BRG60N65D Datasheet

 

BRG60N65D Datasheet and Replacement


   Type Designator: BRG60N65D
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 310 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 35 nS
   Coesⓘ - Output Capacitance, typ: 300 pF
   Package: TO3P
      - IGBT Cross-Reference

 

BRG60N65D Datasheet (PDF)

 ..1. Size:1988K  1
 brg60n65d.pdf pdf_icon

BRG60N65D

BRG60N65D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , ,RoHS Built in fast recovery diode, Saturation voltage positive temperature

 ..2. Size:1988K  blue-rocket-elect
 brg60n65d.pdf pdf_icon

BRG60N65D

BRG60N65D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , ,RoHS Built in fast recovery diode, Saturation voltage positive temperature

 7.1. Size:768K  blue-rocket-elect
 brg60n60d.pdf pdf_icon

BRG60N65D

BRG60N60D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , ,RoHS Built in fast recovery diode, Saturation voltage positive temperature

Datasheet: SKM50GAL123D , SKM50GB063D , SKM50GB123D , SKM50GD063DL , SKM50GDL063DL , SKM50GH063DL , SKM75GAL063D , SKM75GAL123D , RJH60F5DPQ-A0 , SKM75GB063D , SKM75GB123D , SKM75GB124D , SKM75GB173D , SKM75GD123D , SKM75GD124D , SKM75GDL123D , SM2G100US120 .

History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL

Keywords - BRG60N65D transistor datasheet

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