BRG60N65D Specs and Replacement
Type Designator: BRG60N65D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 310 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 35 nS
Coesⓘ - Output Capacitance, typ: 300 pF
Package: TO3P
BRG60N65D Substitution - IGBT ⓘ Cross-Reference Search
BRG60N65D datasheet
brg60n65d.pdf
BRG60N65D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , , RoHS Built in fast recovery diode, Saturation voltage positive temperature ... See More ⇒
brg60n65d.pdf
BRG60N65D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , , RoHS Built in fast recovery diode, Saturation voltage positive temperature ... See More ⇒
brg60n60d.pdf
BRG60N60D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , , RoHS Built in fast recovery diode, Saturation voltage positive temperature ... See More ⇒
Specs: SKM50GAL123D, SKM50GB063D, SKM50GB123D, SKM50GD063DL, SKM50GDL063DL, SKM50GH063DL, SKM75GAL063D, SKM75GAL123D, GT30F131, SKM75GB063D, SKM75GB123D, SKM75GB124D, SKM75GB173D, SKM75GD123D, SKM75GD124D, SKM75GDL123D, SM2G100US120
Keywords - BRG60N65D transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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