IGC142T120T6RL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGC142T120T6RL
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
Coesⓘ - Capacitancia de salida, typ: 580 pF
Paquete / Cubierta: CHIP
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IGC142T120T6RL Datasheet (PDF)
igc142t120t6rl.pdf
IGC142T120T6RL IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC142T120T6RL 1200V 150A 11.31 x 12.56 mm2 sawn on foil MECH
igc142t120t6rh.pdf
IGC142T120T6RH IGBT4 High Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low V medium / high power modules CEsat soft turn off positive temperature coefficient Applications: easy paralleling G medium / high power drives E Chip Type VCE ICn Die Size Package IGC142T120T6RH 1200V 150A 11.31 x 12.56 mm2 sawn
igc142t120t6rm.pdf
IGC142T120T6RM IGBT4 Medium Power Chip Features: 1200V Trench + Field stop technology This chip is used for:C low switching losses medium power modules soft turnoff positive temperature coefficient Applications: easy paralleling G medium power drives E Chip Type VCE ICn Die Size Package IGC142T120T6RM 1200V 150A 11.31 x 12.56 mm2 sawn on f
igc142t120t8rl.pdf
IGC142T120T8RLIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC142T120T8RL 1200V
igc142t120t8rm.pdf
IGC142T120T8RMIGBT4 Medium Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology medium power modulesC low switching losses soft turn offApplications: positive temperature coefficient medium power drives easy parallelingG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn1 ) Die Size PackageIGC142T12
Otros transistores... IGC168T170S8RH , APT50GF120LR , APT50GF60AR , IGC142T120T8RL , IGC142T120T8RM , IGC15T65QE , APT50GF60LRD , IGC142T120T6RH , RJP30E2DPP-M0 , IGC142T120T6RM , IGC28T65T8M , IGC28T65QE , BUK854-800A , BUK856-400IZ , BUK856-800A , BUK866-400IZ , CM75DY-28H .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2