IGC142T120T6RL PDF and Equivalents Search

 

IGC142T120T6RL Specs and Replacement

Type Designator: IGC142T120T6RL

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

Coesⓘ - Output Capacitance, typ: 580 pF

Package: CHIP

 IGC142T120T6RL Substitution

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IGC142T120T6RL datasheet

 ..1. Size:70K  infineon
igc142t120t6rl.pdf pdf_icon

IGC142T120T6RL

IGC142T120T6RL IGBT4 Low Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC142T120T6RL 1200V 150A 11.31 x 12.56 mm2 sawn on foil MECH... See More ⇒

 1.1. Size:69K  infineon
igc142t120t6rh.pdf pdf_icon

IGC142T120T6RL

IGC142T120T6RH IGBT4 High Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low V medium / high power modules CEsat soft turn off positive temperature coefficient Applications easy paralleling G medium / high power drives E Chip Type VCE ICn Die Size Package IGC142T120T6RH 1200V 150A 11.31 x 12.56 mm2 sawn... See More ⇒

 1.2. Size:70K  infineon
igc142t120t6rm.pdf pdf_icon

IGC142T120T6RL

IGC142T120T6RM IGBT4 Medium Power Chip Features 1200V Trench + Field stop technology This chip is used for C low switching losses medium power modules soft turnoff positive temperature coefficient Applications easy paralleling G medium power drives E Chip Type VCE ICn Die Size Package IGC142T120T6RM 1200V 150A 11.31 x 12.56 mm2 sawn on f... See More ⇒

 3.1. Size:68K  infineon
igc142t120t8rl.pdf pdf_icon

IGC142T120T6RL

IGC142T120T8RL IGBT4 Low Power Chip Features Recommended for 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficient Applications easy paralleling low / medium power drives Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC142T120T8RL 1200V ... See More ⇒

Specs: IGC168T170S8RH, APT50GF120LR, APT50GF60AR, IGC142T120T8RL, IGC142T120T8RM, IGC15T65QE, APT50GF60LRD, IGC142T120T6RH, SGT50T65FD1PT, IGC142T120T6RM, IGC28T65T8M, IGC28T65QE, BUK854-800A, BUK856-400IZ, BUK856-800A, BUK866-400IZ, CM75DY-28H

Keywords - IGC142T120T6RL transistor spec

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