STGB10NB37LZ Todos los transistores

 

STGB10NB37LZ IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGB10NB37LZ
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 125 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 400 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 16 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.3 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 520 nS
   Coesⓘ - Capacitancia de salida, typ: 1700pF pF
   Paquete / Cubierta: D2PAK

 Búsqueda de reemplazo de STGB10NB37LZ - IGBT

 

Principales características: STGB10NB37LZ

 ..1. Size:747K  st
stgb10nb37lz stgp10nb37lz.pdf pdf_icon

STGB10NB37LZ

STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features Low threshold voltage Low on-voltage drop TAB TAB Low gate charge High current capability 3 High voltage clamping feature 3 1 2 1 TO-220 D PAK Applications Automotive ignition Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off

 ..2. Size:747K  st
stgb10nb37lz.pdf pdf_icon

STGB10NB37LZ

STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features Low threshold voltage Low on-voltage drop TAB TAB Low gate charge High current capability 3 High voltage clamping feature 3 1 2 1 TO-220 D PAK Applications Automotive ignition Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off

 6.1. Size:350K  st
stgb10nb40lz.pdf pdf_icon

STGB10NB37LZ

STGB10NB40LZ N-CHANNEL CLAMPED 20A - D PAK INTERNALLY CLAMPED PowerMESH IGBT TYPE VCES VCE(sat) IC STGB10NB40LZ CLAMPED

 6.2. Size:604K  st
stgb10nb60s.pdf pdf_icon

STGB10NB37LZ

STGB10NB60S STGP10NB60S 16 A, 600 V, low drop IGBT Features Low on-voltage drop (VCE(sat)) High current capability TAB TAB Applications 3 Light dimmer 3 1 2 1 Static relays TO-220 D2PAK Motor drive Description This IGBT utilizes the advanced PowerMESH process featuring extremely low on-state voltage Figure 1. Internal schematic diagram drop in low-fr

Otros transistores... SNG201025 , SNG20620A , SNG301010 , SNG30610 , SNG30610A , SNG401225 , SNG40660 , STGB10N60L , G50T65D , STGB20NB32LZ , STGB20NB37LZ , STGB30NB60H , STGB3NB60HD , STGB7NB60HD , STGD3NB60S , STGD7NB60H , STGP10N60L .

 

 
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