IGC142T120T6RM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IGC142T120T6RM IGBT4 Medium Power Chip Features: 1200V Trench + Field stop technology This chip is used for:C low switching losses medium power modules soft turnoff positive temperature coefficient Applications: easy paralleling G medium power drives E Chip Type VCE ICn Die Size Package IGC142T120T6RM 1200V 150A 11.31 x 12.56 mm2 sawn on f

IGC142T120T6RH IGBT4 High Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low V medium / high power modules CEsat soft turn off positive temperature coefficient Applications: easy paralleling G medium / high power drives E Chip Type VCE ICn Die Size Package IGC142T120T6RH 1200V 150A 11.31 x 12.56 mm2 sawn

IGC142T120T6RL IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC142T120T6RL 1200V 150A 11.31 x 12.56 mm2 sawn on foil MECH

IGC142T120T8RLIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC142T120T8RL 1200V

IGC142T120T8RMIGBT4 Medium Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology medium power modulesC low switching losses soft turn offApplications: positive temperature coefficient medium power drives easy parallelingG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn1 ) Die Size PackageIGC142T12