IGC142T120T6RM - аналоги и описание IGBT

IGC142T120T6RM IGBT4 Medium Power Chip Features 1200V Trench + Field stop technology This chip is used for C low switching losses medium power modules soft turnoff positive temperature coefficient Applications easy paralleling G medium power drives E Chip Type VCE ICn Die Size Package IGC142T120T6RM 1200V 150A 11.31 x 12.56 mm2 sawn on f

IGC142T120T6RH IGBT4 High Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low V medium / high power modules CEsat soft turn off positive temperature coefficient Applications easy paralleling G medium / high power drives E Chip Type VCE ICn Die Size Package IGC142T120T6RH 1200V 150A 11.31 x 12.56 mm2 sawn

IGC142T120T6RL IGBT4 Low Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC142T120T6RL 1200V 150A 11.31 x 12.56 mm2 sawn on foil MECH

IGC142T120T8RL IGBT4 Low Power Chip Features Recommended for 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficient Applications easy paralleling low / medium power drives Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC142T120T8RL 1200V

IGC142T120T8RM IGBT4 Medium Power Chip Features Recommended for 1200V Trench & Field stop technology medium power modules C low switching losses soft turn off Applications positive temperature coefficient medium power drives easy paralleling G Qualified according to JEDEC for target E applications Chip Type VCE ICn1 ) Die Size Package IGC142T12