Справочник IGBT. IGC142T120T6RM

 

IGC142T120T6RM - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IGC142T120T6RM

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1200

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.8

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 150

Максимальная температура перехода (Tj): 175

Емкость коллектора (Cc), pf: 580

Корпус: CHIP

Аналог (замена) для IGC142T120T6RM

 

 

IGC142T120T6RM Datasheet (PDF)

1.1. igc142t120t6rm.pdf Size:70K _igbt_a

IGC142T120T6RM
IGC142T120T6RM

 IGC142T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology This chip is used for: C • low switching losses • medium power modules • soft turnoff • positive temperature coefficient Applications: • easy paralleling G • medium power drives E Chip Type VCE ICn Die Size Package IGC142T120T6RM 1200V 150A 11.31 x 12.56 mm2 sawn on f

1.2. igc142t120t8rm.pdf Size:68K _igbt_a

IGC142T120T6RM
IGC142T120T6RM

IGC142T120T8RM IGBT4 Medium Power Chip Features: Recommended for:  1200V Trench & Field stop technology  medium power modules C  low switching losses  soft turn off Applications:  positive temperature coefficient  medium power drives  easy paralleling G  Qualified according to JEDEC for target E applications Chip Type VCE ICn1 ) Die Size Package IGC142T12

 1.3. igc142t120t6rl.pdf Size:70K _igbt_a

IGC142T120T6RM
IGC142T120T6RM

 IGC142T120T6RL IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology This chip is used for: C • low switching losses • low / medium power modules • positive temperature coefficient • easy paralleling Applications: G • low / medium power drives E Chip Type VCE ICn Die Size Package IGC142T120T6RL 1200V 150A 11.31 x 12.56 mm2 sawn on foil MECH

1.4. igc142t120t6rh.pdf Size:69K _igbt_a

IGC142T120T6RM
IGC142T120T6RM

 IGC142T120T6RH IGBT4 High Power Chip FEATURES: • 1200V Trench + Field Stop technology This chip is used for: C • low V • medium / high power modules CEsat • soft turn off • positive temperature coefficient Applications: • easy paralleling G • medium / high power drives E Chip Type VCE ICn Die Size Package IGC142T120T6RH 1200V 150A 11.31 x 12.56 mm2 sawn

 1.5. igc142t120t8rl.pdf Size:68K _igbt_a

IGC142T120T6RM
IGC142T120T6RM

IGC142T120T8RL IGBT4 Low Power Chip Features: Recommended for:  1200V Trench & Field stop technology  low / medium power modules C  low switching losses  positive temperature coefficient Applications:  easy paralleling  low / medium power drives  Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC142T120T8RL 1200V

Другие IGBT... APT50GF120LR , APT50GF60AR , IGC142T120T8RL , IGC142T120T8RM , IGC15T65QE , APT50GF60LRD , IGC142T120T6RH , IGC142T120T6RL , IRG4PC50UD , IGC28T65T8M , IGC28T65QE , BUK854-800A , BUK856-400IZ , BUK856-800A , BUK866-400IZ , CM75DY-28H , CT15SM-24 .

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Список транзисторов

Обновления

IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |
 


 

 

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