STGW50NB60H Todos los transistores

 

STGW50NB60H - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGW50NB60H
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 190 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.8 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Coesⓘ - Capacitancia de salida, typ: 4500pF pF
   Qgⓘ - Carga total de la puerta, typ: 260 nC
   Paquete / Cubierta: TO247

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STGW50NB60H Datasheet (PDF)

 ..1. Size:302K  st
stgw50nb60h.pdf

STGW50NB60H
STGW50NB60H

STGW50NB60HN-CHANNEL 50A - 600V - TO-247PowerMESH IGBTTYPE VCES VCE(sat) (Max) ICSTGW50NB60H 600 V

 4.1. Size:299K  st
stgw50nb60m.pdf

STGW50NB60H
STGW50NB60H

STGW50NB60MN-CHANNEL 50A - 600V - TO-247PowerMESH IGBTTYPE VCES VCE(sat)(25C) ICSTGW50NB60M 600 V

 7.1. Size:286K  st
stgw50nc60w.pdf

STGW50NB60H
STGW50NB60H

STGW50NC60WN-channel 600V - 55A - TO-247Ultra fast switching PowerMESH IGBTFeaturesVCE(sat) IC VCESType(max)@25C @100CSTGW50NC60W 600V

 8.1. Size:1756K  st
stgw50h60df.pdf

STGW50NB60H
STGW50NB60H

STGW50H60DF50 A, 600 V field stop trench gate IGBT with Ultrafast diodeDatasheet - production dataFeatures High speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time32 Ultrafast soft recovery antiparallel diode1 Lead free packageTO-247Applications Photovoltaic inverters

 8.2. Size:242K  st
stgw50hf60s.pdf

STGW50NB60H
STGW50NB60H

STGW50HF60S60 A, 600 V, very low drop IGBTFeatures Very low on-state voltage drop Low switching off High current capabilityApplications32 PV inverter1 UPSTO-247DescriptionSTGW50HF60S is a very low drop IGBT based on new advanced planar technology, showing Figure 1. Internal schematic diagramextremely low on-state voltage and limited turn-off lo

 8.3. Size:1075K  st
stgw50hf65sd.pdf

STGW50NB60H
STGW50NB60H

STGW50HF65SD STGWT50HF65SD60 A, 650 V, very low drop IGBT with soft and fast recovery diodeDatasheet - preliminary dataFeatures Very low on-state voltage drop Low switching off High current capability Very soft Ultrafast recovery antiparallel diode32312Applications1 PV inverterTO-3PTO-247 UPSDescriptionFigure 1. Internal schematic di

 8.4. Size:762K  st
stgw50hf60sd.pdf

STGW50NB60H
STGW50NB60H

STGW50HF60SD60 A, 600 V, very low drop IGBTwith soft and fast recovery diodeFeatures Very low on-state voltage drop Low switching off High current capability Very soft ultra fast recovery antiparallel diode3Application21 PV inverterTO-247 UPSDescriptionSTGW50HF60SD is a very low drop IGBT based on new advanced planar technology, showing Figu

Otros transistores... STGD7NB60H , STGP10N60L , STGP7NB60HD , STGP7NB60HDFP , STGW12NB60H , STGW20NB60H , STGW20NB60HD , STGW30NB60HD , SGH80N60UFD , STGY50NB60HD , TA49014 , TA49015 , TA49016 , TA49017 , TA49021 , TA49047 , TA49048 .

 

 
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