FGA15N120ANTDTU-F109 Todos los transistores

 

FGA15N120ANTDTU-F109 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGA15N120ANTDTU-F109
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 186 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 8.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 20 nS
   Coesⓘ - Capacitancia de salida, typ: 143 pF
   Qgⓘ - Carga total de la puerta, typ: 120 nC
   Paquete / Cubierta: TO3P
 

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FGA15N120ANTDTU-F109 Datasheet (PDF)

 0.1. Size:932K  fairchild semi
 fga15n120antdtu f109.pdf pdf_icon

FGA15N120ANTDTU-F109

May 2006FGA15N120ANTD / FGA15N120ANTD_F109tm1200V NPT Trench IGBTFeatures Description NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction Low saturation voltage: VCE(sat), typ = 1.9V and switching performances, high avalanche ruggedness and @ IC = 1

 0.2. Size:901K  onsemi
 fga15n120antdtu.pdf pdf_icon

FGA15N120ANTDTU-F109

FGA15N120ANTDTU1200 V, 15 A NPT Trench IGBTDescriptionUsing ON Semiconductor's proprietary trench design and Featuresadvanced NPT technology, the 1200V NPT IGBT offers NPT Trench Technology, Positive temperature coefficient superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. Low Saturation Voltage: VCE(sat), typ = 1.9 V

 5.1. Size:733K  fairchild semi
 fga15n120ftd.pdf pdf_icon

FGA15N120ANTDTU-F109

January 2008FGA15N120FTDtm1200V, 15A Field Stop Trench IGBTFeatures Field stop trench technologyGeneral Description High speed switchingUsing advanced field stop trench technology, Fairchilds 1200V Low saturation voltage: VCE(sat) =1.58V @ IC = 15Atrench IGBTs offer superior conduction and switching perfor- High input impedancemances, and easy parallel o

Otros transistores... TA49113 , TA49115 , TA49117 , TA49119 , TA49121 , TA49123 , TA49182 , TA9895 , FGL60N100BNTD , FGA15N120FTD , FGA180N33ATD , FGA20N120FTD , FGA20S120M , FGA25N120ANTD , FGA25N120ANTDTU-F109 , FGA25N120FTD , FGA30N120FTD .

 

 
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