FGA15N120ANTDTU-F109 Datasheet and Replacement
Type Designator: FGA15N120ANTDTU-F109
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 186 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 143 pF
Package: TO3P
FGA15N120ANTDTU-F109 substitution
FGA15N120ANTDTU-F109 Datasheet (PDF)
fga15n120antdtu f109.pdf

May 2006FGA15N120ANTD / FGA15N120ANTD_F109tm1200V NPT Trench IGBTFeatures Description NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction Low saturation voltage: VCE(sat), typ = 1.9V and switching performances, high avalanche ruggedness and @ IC = 1
fga15n120antdtu.pdf

FGA15N120ANTDTU1200 V, 15 A NPT Trench IGBTDescriptionUsing ON Semiconductor's proprietary trench design and Featuresadvanced NPT technology, the 1200V NPT IGBT offers NPT Trench Technology, Positive temperature coefficient superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. Low Saturation Voltage: VCE(sat), typ = 1.9 V
fga15n120ftd.pdf

January 2008FGA15N120FTDtm1200V, 15A Field Stop Trench IGBTFeatures Field stop trench technologyGeneral Description High speed switchingUsing advanced field stop trench technology, Fairchilds 1200V Low saturation voltage: VCE(sat) =1.58V @ IC = 15Atrench IGBTs offer superior conduction and switching perfor- High input impedancemances, and easy parallel o
Datasheet: TA49113 , TA49115 , TA49117 , TA49119 , TA49121 , TA49123 , TA49182 , TA9895 , IRG4PC50U , FGA15N120FTD , FGA180N33ATD , FGA20N120FTD , FGA20S120M , FGA25N120ANTD , FGA25N120ANTDTU-F109 , FGA25N120FTD , FGA30N120FTD .
Keywords - FGA15N120ANTDTU-F109 transistor datasheet
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