FGA180N33ATD Todos los transistores

 

FGA180N33ATD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGA180N33ATD
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 390 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 330 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 180 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 80 nS
   Coesⓘ - Capacitancia de salida, typ: 305 pF
   Paquete / Cubierta: TO3P
 

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FGA180N33ATD datasheet

 ..1. Size:757K  fairchild semi
 fga180n33atd.pdf pdf_icon

FGA180N33ATD

April 2008 FGA180N33ATD tm 330V, 180A PDP Trench IGBT Features General Description High Current Capability Using Novel Trench IGBT Technology, Fairchild s new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage VCE(sat) =1.03V @ IC = 40A tions where low conduction and switching losses are essential. High input impedance RoHS... See More ⇒

 3.1. Size:681K  onsemi
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FGA180N33ATD

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Otros transistores... TA49117 , TA49119 , TA49121 , TA49123 , TA49182 , TA9895 , FGA15N120ANTDTU-F109 , FGA15N120FTD , TGPF30N43P , FGA20N120FTD , FGA20S120M , FGA25N120ANTD , FGA25N120ANTDTU-F109 , FGA25N120FTD , FGA30N120FTD , FGA30N60LSD , FGA50N100BNT .

 

 
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