FGB20N60SF Todos los transistores

 

FGB20N60SF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGB20N60SF

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 208 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V

trⓘ - Tiempo de subida, typ: 16 nS

Coesⓘ - Capacitancia de salida, typ: 110 pF

Qgⓘ - Carga total de la puerta, typ: 65 nC

Encapsulados: TO263

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FGB20N60SF datasheet

 ..1. Size:643K  fairchild semi
fgb20n60sf.pdf pdf_icon

FGB20N60SF

March 2015 FGB20N60SF 600 V, 20 A Field Stop IGBT Features General Description High Current Capability Using novel field stop IGBT technology, Fairchild s field stop IGBTs offer the optimum performance for solar inverter, UPS, Low Saturation Voltage VCE(sat) =2.2 V @ IC = 20 A welder and PFC applications where low conduction and switch- High Input Impedance ing losses

 0.1. Size:473K  fairchild semi
fgb20n60sfd.pdf pdf_icon

FGB20N60SF

March 2015 FGB20N60SFD 600 V, 20 A Field Stop IGBT Features Applications High Current Capability Solar Inverter, UPS, Welder, PFC Low Saturation Voltage VCE(sat) = 2.2 V @ IC = 20 A General Description High Input Impedance Fast Switching EOFF = 8 uJ/A Using novel field stop IGBT technology, Fairchild s field stop IGBTs offer the optimum performance for solar i

 0.2. Size:758K  onsemi
fgb20n60sfd-f085.pdf pdf_icon

FGB20N60SF

FGB20N60SFD-F085 600V, 20A Field Stop IGBT General Description Features Using novel field-stop IGBT t echnology, ON Semiconductor s High current capability new series of field-stop IGBTs offers the optimum Low saturation voltage VCE(sat) = 2.2V @ IC = 20A performance for automotive chargers, inverters, and other applications where low conduction and switching losses are

Otros transistores... FGA30N60LSD , FGA50N100BNT , FGA50N100BNTD , FGA50N100BNTD2 , FGA60N60UFD , FGA90N33ATD , FGAF40N60UF , FGAF40N60UFD , IXRH40N120 , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , FGH25N120FTDS , FGH30N120FTD , FGH30N60LSD .

History: VS-40MT120UHAPBF | VS-40MT120UHTAPBF | VS-20MT120UFAPBF

 

 

 


 
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