FGB20N60SFD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGB20N60SFD
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 208 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 16 nS
Coesⓘ - Capacitancia de salida, typ: 110 pF
Qgⓘ - Carga total de la puerta, typ: 65 nC
Paquete / Cubierta: TO263
Búsqueda de reemplazo de FGB20N60SFD - IGBT
FGB20N60SFD Datasheet (PDF)
fgb20n60sfd.pdf
March 2015FGB20N60SFD600 V, 20 A Field Stop IGBTFeatures Applications High Current Capability Solar Inverter, UPS, Welder, PFC Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20 AGeneral Description High Input Impedance Fast Switching : EOFF = 8 uJ/AUsing novel field stop IGBT technology, Fairchilds field stopIGBTs offer the optimum performance for solar i
fgb20n60sfd-f085.pdf
FGB20N60SFD-F085 600V, 20A Field Stop IGBTGeneral DescriptionFeatures Using novel field-stop IGBT t echnology, ON Semiconductors High current capabilitynew series of field-stop IGBTs offers the optimum Low saturation voltage: VCE(sat) = 2.2V @ IC = 20Aperformance for automotive chargers, inverters, and other applications where low conduction and switching losses are
fgb20n60sf.pdf
March 2015FGB20N60SF600 V, 20 A Field Stop IGBTFeatures General Description High Current Capability Using novel field stop IGBT technology, Fairchilds field stop IGBTs offer the optimum performance for solar inverter, UPS, Low Saturation Voltage: VCE(sat) =2.2 V @ IC = 20 Awelder and PFC applications where low conduction and switch- High Input Impedanceing losses
Otros transistores... FGA50N100BNT , FGA50N100BNTD , FGA50N100BNTD2 , FGA60N60UFD , FGA90N33ATD , FGAF40N60UF , FGAF40N60UFD , FGB20N60SF , IRG7S313U , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , FGH25N120FTDS , FGH30N120FTD , FGH30N60LSD , FGH40N60SF .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2