FGH20N60UFD Todos los transistores

 

FGH20N60UFD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGH20N60UFD
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 165 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 17 nS
   Coesⓘ - Capacitancia de salida, typ: 110 pF
   Qgⓘ - Carga total de la puerta, typ: 63 nC
   Paquete / Cubierta: TO247

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FGH20N60UFD Datasheet (PDF)

 ..1. Size:1073K  fairchild semi
fgh20n60ufd.pdf

FGH20N60UFD FGH20N60UFD

April 2011FGH20N60UFD600V, 20A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induc- Low saturation voltage: VCE(sat) =1.8V @ IC = 20Ation Heating, UPS, SMPS and PFC applications where low con- High input impedanceduction and switc

 6.1. Size:791K  fairchild semi
fgh20n60sfd.pdf

FGH20N60UFD FGH20N60UFD

September 2008 FGH20N60SFDtm600V, 20A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.2V @ IC = 20AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion an

 6.2. Size:800K  onsemi
fgh20n60sfdtu fgh20n60sfdtu-f085.pdf

FGH20N60UFD FGH20N60UFD

IGBT - Field Stop 600 V, 20 AFGH20N60SFDTU,FGH20N60SFDTU-F085DescriptionUsing Novel Field Stop IGBT Technology, ON Semiconductorswww.onsemi.comnew series of Field Stop IGBTs offer the optimum performance forAutomotive Chargers, Inverter, and other applications where lowconduction and switching losses are essential.CFeatures High Current Capability Low Saturati

Otros transistores... FGA90N33ATD , FGAF40N60UF , FGAF40N60UFD , FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , IHW20N120R2 , FGH25N120FTDS , FGH30N120FTD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF .

 

 
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