FGH20N60UFD Datasheet and Replacement
Type Designator: FGH20N60UFD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 165 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 17 nS
Coesⓘ - Output Capacitance, typ: 110 pF
Qgⓘ - Total Gate Charge, typ: 63 nC
Package: TO247
- IGBT Cross-Reference
FGH20N60UFD Datasheet (PDF)
fgh20n60ufd.pdf

April 2011FGH20N60UFD600V, 20A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induc- Low saturation voltage: VCE(sat) =1.8V @ IC = 20Ation Heating, UPS, SMPS and PFC applications where low con- High input impedanceduction and switc
fgh20n60sfd.pdf

September 2008 FGH20N60SFDtm600V, 20A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.2V @ IC = 20AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion an
fgh20n60sfdtu fgh20n60sfdtu-f085.pdf

IGBT - Field Stop 600 V, 20 AFGH20N60SFDTU,FGH20N60SFDTU-F085DescriptionUsing Novel Field Stop IGBT Technology, ON Semiconductorswww.onsemi.comnew series of Field Stop IGBTs offer the optimum performance forAutomotive Chargers, Inverter, and other applications where lowconduction and switching losses are essential.CFeatures High Current Capability Low Saturati
Datasheet: FGA90N33ATD , FGAF40N60UF , FGAF40N60UFD , FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , IRGP4062D , FGH25N120FTDS , FGH30N120FTD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF .
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