FGH30N60LSD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGH30N60LSD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 480 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.1 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 46 nS
Coesⓘ - Capacitancia de salida, typ: 245 pF
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
FGH30N60LSD Datasheet (PDF)
fgh30n60lsd.pdf

July 2008FGH30N60LSDtmFeatures General Description Low saturation voltage: VCE(sat) =1.1V @ IC = 30A The FGH30N60LSD is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolar High Input Impedancetransistors.This device has the high input impedance of a Low Conduction LossMOSFET and the low on-state conduction loss of a bipolartra
fgh30n60lsd.pdf

IGBT - PT600 V, 30 AFGH30N60LSDDescriptionUsing ON Semiconductor s advanced PT technology,the FGA30N60LSD IGBT offers superior conduction performances,www.onsemi.comwhich offer the optimum performance for medium switchingapplication such as solar inverter, UPS applications where lowCconduction losses are the most important factor.Features Low Saturation Voltage: VC
fgh30n120ftd.pdf

November 2008FGH30N120FTDtm1200V, 30A Trench IGBTFeatures General Description Field stop trench technology Using advanced field stop trench technology, Fairchilds 1200Vtrench IGBTs offer superior conduction and switching perfor- High speed switchingmances, and easy parallel operation with exceptional avalanche Low saturation voltage: VCE(sat) = 1.6V @ IC = 30Arug
fgh30s130p.pdf

October 2012FGH30S130PTMShorted Anode IGBTFeatures General Description High speed switching Using advanced Field Stop Trench and Shorted Anode technol-ogy, Fairchilds Shorted AnodeTM Trench IGBTs offer superior Low saturation voltage: VCE(sat) =1.75V @ IC = 30Aconduction and switching performances, and easy parallel oper- High input impedanceation with exceptiona
Otros transistores... FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , FGH25N120FTDS , FGH30N120FTD , IHW20N120R2 , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD , FGH50N3 .
History: FGW50N60VD | IGF40T120F | SGB02N60 | FGPF4633 | IKW75N60T | MBQ40T65FDSC
History: FGW50N60VD | IGF40T120F | SGB02N60 | FGPF4633 | IKW75N60T | MBQ40T65FDSC



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