FGH30N60LSD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGH30N60LSD  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 480 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.1 V @25℃

trⓘ - Tiempo de subida, typ: 46 nS

Coesⓘ - Capacitancia de salida, typ: 245 pF

Encapsulados: TO247

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FGH30N60LSD datasheet

 ..1. Size:717K  fairchild semi
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FGH30N60LSD

July 2008 FGH30N60LSD tm Features General Description Low saturation voltage VCE(sat) =1.1V @ IC = 30A The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar High Input Impedance transistors.This device has the high input impedance of a Low Conduction Loss MOSFET and the low on-state conduction loss of a bipolar tra

 ..2. Size:388K  onsemi
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FGH30N60LSD

IGBT - PT 600 V, 30 A FGH30N60LSD Description Using ON Semiconductor s advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, www.onsemi.com which offer the optimum performance for medium switching application such as solar inverter, UPS applications where low C conduction losses are the most important factor. Features Low Saturation Voltage VC

 8.1. Size:582K  fairchild semi
fgh30n120ftd.pdf pdf_icon

FGH30N60LSD

November 2008 FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description Field stop trench technology Using advanced field stop trench technology, Fairchild s 1200V trench IGBTs offer superior conduction and switching perfor- High speed switching mances, and easy parallel operation with exceptional avalanche Low saturation voltage VCE(sat) = 1.6V @ IC = 30A rug

 9.1. Size:667K  fairchild semi
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FGH30N60LSD

October 2012 FGH30S130P TM Shorted Anode IGBT Features General Description High speed switching Using advanced Field Stop Trench and Shorted Anode technol- ogy, Fairchild s Shorted AnodeTM Trench IGBTs offer superior Low saturation voltage VCE(sat) =1.75V @ IC = 30A conduction and switching performances, and easy parallel oper- High input impedance ation with exceptiona

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