All IGBT. FGH30N60LSD Datasheet

 

FGH30N60LSD Datasheet and Replacement


   Type Designator: FGH30N60LSD
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 480 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 46 nS
   Coesⓘ - Output Capacitance, typ: 245 pF
   Package: TO247
      - IGBT Cross-Reference

 

FGH30N60LSD Datasheet (PDF)

 ..1. Size:717K  fairchild semi
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FGH30N60LSD

July 2008FGH30N60LSDtmFeatures General Description Low saturation voltage: VCE(sat) =1.1V @ IC = 30A The FGH30N60LSD is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolar High Input Impedancetransistors.This device has the high input impedance of a Low Conduction LossMOSFET and the low on-state conduction loss of a bipolartra

 ..2. Size:388K  onsemi
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FGH30N60LSD

IGBT - PT600 V, 30 AFGH30N60LSDDescriptionUsing ON Semiconductor s advanced PT technology,the FGA30N60LSD IGBT offers superior conduction performances,www.onsemi.comwhich offer the optimum performance for medium switchingapplication such as solar inverter, UPS applications where lowCconduction losses are the most important factor.Features Low Saturation Voltage: VC

 8.1. Size:582K  fairchild semi
fgh30n120ftd.pdf pdf_icon

FGH30N60LSD

November 2008FGH30N120FTDtm1200V, 30A Trench IGBTFeatures General Description Field stop trench technology Using advanced field stop trench technology, Fairchilds 1200Vtrench IGBTs offer superior conduction and switching perfor- High speed switchingmances, and easy parallel operation with exceptional avalanche Low saturation voltage: VCE(sat) = 1.6V @ IC = 30Arug

 9.1. Size:667K  fairchild semi
fgh30s130p.pdf pdf_icon

FGH30N60LSD

October 2012FGH30S130PTMShorted Anode IGBTFeatures General Description High speed switching Using advanced Field Stop Trench and Shorted Anode technol-ogy, Fairchilds Shorted AnodeTM Trench IGBTs offer superior Low saturation voltage: VCE(sat) =1.75V @ IC = 30Aconduction and switching performances, and easy parallel oper- High input impedanceation with exceptiona

Datasheet: FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , FGH25N120FTDS , FGH30N120FTD , IHW20N120R2 , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD , FGH50N3 .

History: APT15GP60BSC | IKW25T120 | SNG30610A | FGW50N60VD | FGH30N120FTD | FGH40N60SF | IKI04N60T

Keywords - FGH30N60LSD transistor datasheet

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