FGH40N60UF Todos los transistores

 ..1. Size:705K  fairchild semi
 fgh40n60uf.pdf

July 2008 FGH40N60UF tm 600V, 40A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new ses- ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage VCE(sat) =1.8V @ IC = 40A Induction Heating, UPS, SMPS and PFC applications where low High input impedance conduction and swit

 ..2. Size:1154K  onsemi
 fgh40n60uf.pdf

FGH40N60UF 600 V, 40 A Field Stop IGBT General Description Using novel field stop IGBT technology, ON Semicondcutor s Features field stop IGBTs offer the optimum performance for solar High Current Capability inverter, UPS, welder and PFC applications where low Low Saturation Voltage VCE(sat) = 1.8 V @ IC = 40 A conduction and switch-ing losses are essential. High Inp

 0.1. Size:723K  fairchild semi
 fgh40n60ufd.pdf

April 2009 FGH40N60UFD tm 600V, 40A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new ses- ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage VCE(sat) =1.8V @ IC = 40A Induction Heating, UPS, SMPS and PFC applications where low High input impedance conduction and sw

 0.2. Size:535K  onsemi
 fgh40n60ufd.pdf

IGBT - Field Stop 600 V, 40 A FGH40N60UFD Description Using novel Field Stop IGBT technology, ON Semiconductor s field stop IGBTs offer the optimum performance for solar inverter, www.onsemi.com UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 600 V 40 A High Current Capability C Low

 6.1. Size:1290K  fairchild semi
 fgh40n60smd.pdf

November 2010 FGH40N60SMD 600V, 40A Field Stop IGBT Features General Description Maximum Junction Temperature TJ =175oC Using Novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for Solar Positive Temperaure Co-efficient for easy parallel operating Inverter, UPS, Welder and SMPS applications where low con- High curre

 6.2. Size:806K  fairchild semi
 fgh40n60sfd.pdf

July 2008 FGH40N60SFD tm 600V, 40A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new ses- ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage VCE(sat) =2.3V @ IC = 40A Induction Heating, UPS, SMPS and PFC applications where High input impedance low conduction and swi

 6.3. Size:352K  fairchild semi
 fgh40n60smdf.pdf

March 2011 FGH40N60SMDF tm 600V, 40A Field Stop IGBT Features General Description Maximum Junction Temperature TJ =175oC Using Novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for Solar Positive Temperaure Co-efficient for easy parallel operating Inverter, UPS, SMPS, IH and PFC applications where low con- High

 6.4. Size:677K  fairchild semi
 fgh40n60sf.pdf

March 2009 FGH40N60SF tm 600V, 40A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new ses- ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage VCE(sat) =2.3V @ IC = 40A Inverter, UPS, SMPS and PFC applications where low conduc- High input impedance tion and switching

 6.5. Size:369K  onsemi
 fgh40n60smd-f085.pdf

IGBT - Field Stop 600 V, 40 A FGH40N60SMD-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor s new series of Field Stop IGBTs offer the optimum performance for www.onsemi.com Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features C Maximum Junction Temperature TJ = 175 C Positive Tem

 6.6. Size:803K  onsemi
 fgh40n60sfdtu fgh40n60sfdtu-f085.pdf

IGBT - Field Stop 600 V, 40 A FGH40N60SFDTU, FGH40N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor s www.onsemi.com new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. C Features High Current Capability Low Saturati

 6.7. Size:303K  onsemi
 fgh40n60smd.pdf

April 2013 FGH40N60SMD 600 V, 40 A Field Stop IGBT Features General Description Maximum Junction Temperature TJ = 175oC Using novel field stop IGBT technology, Fairchild s new series of field stop 2nd generation IGBTs offer the optimum perfor- Positive Temperaure Co-efficient for Easy Parallel Operating mance for solar inverter, UPS, welder, telecom, ESS and PFC High C

 6.8. Size:435K  onsemi
 fgh40n60sfd.pdf

March 2015 FGH40N60SFD 600 V, 40 A Field Stop IGBT Features General Description High Current Capability Using novel field stop IGBT technology, Fairchild s field stop IGBTs offer the optimum performance for solar inverter, UPS, Low Saturation Voltage VCE(sat) = 2.3 V @ IC = 40 A welder, microwave oven, telecom, ESS and PFC applications High Input Impedance where low cond

 6.9. Size:578K  onsemi
 fgh40n60smdf.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.10. Size:482K  onsemi
 fgh40n60smdf-f085.pdf

IGBT - Field Stop 600 V, 40 A FGH40N60SMDF-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor new series of Field Stop IGBTs offer the optimum performance www.onsemi.com for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. VCES IC Features 600 V 40 A Max Junction Temperature TJ = 175 C C

 6.11. Size:507K  onsemi
 fgh40n60sf.pdf

IGBT - Field Stop 600 V, 40 A FGH40N60SF Description Using novel field stop IGBT technology, ON Semiconductor s field stop IGBTs offer the optimum performance for solar inverter, UPS, www.onsemi.com welder and PFC applications where low conduction and switching losses are essential. C Features High Current Capability Low Saturation Voltage VCE(sat) = 2.3 V @ IC = 40 A G